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VS-8E2TX06-M PDF预览

VS-8E2TX06-M

更新时间: 2024-10-30 20:52:55
品牌 Logo 应用领域
威世 - VISHAY 快速软恢复高电源软恢复二极管超快速软恢复二极管局域网超快速软恢复高功率电源
页数 文件大小 规格书
9页 168K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2

VS-8E2TX06-M 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:R-PSFM-T2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74其他特性:FREEWHEELING DIODE, LOW LEAKAGE CURRENT
应用:HYPERFAST SOFT RECOVERY HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:77 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.023 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-8E2TX06-M 数据手册

 浏览型号VS-8E2TX06-M的Datasheet PDF文件第2页浏览型号VS-8E2TX06-M的Datasheet PDF文件第3页浏览型号VS-8E2TX06-M的Datasheet PDF文件第4页浏览型号VS-8E2TX06-M的Datasheet PDF文件第5页浏览型号VS-8E2TX06-M的Datasheet PDF文件第6页浏览型号VS-8E2TX06-M的Datasheet PDF文件第7页 
VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, extremely low Qrr  
• 175 °C maximum operating junction temperature  
• For PFC CCM operation  
• True 2 pin package  
• Low forward voltage drop  
2L TO-220AC  
2L TO-220 FULL-PAK  
• Low leakage current  
Base  
cathode  
2
• Fully isolated package (VINS = 2500 VRMS  
)
• Compliant to RoHS directive 2002/95/EC  
• Halogen-free according to IEC 61249-2-21 definition  
• Designed and qualified for industrial level  
1
3
1
2
DESCRIPTION/APPLICATIONS  
Cathode  
Anode  
Cathode  
Anode  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
VS-8E2TX06  
VS-8E2TX06FP  
PRODUCT SUMMARY  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
Package  
2L TO-220AC, 2L TO-220 FP  
IF(AV)  
8 A  
600 V  
VR  
These devices are intended for use in PFC boost stage in the  
ac-to-dc section of SMPS, inverters or as freewheeling  
diodes.  
VF at IF  
3.2 V  
trr (typ.)  
TJ max.  
Diode variation  
13 ns  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
600  
V
TC = 129 °C  
C = 71 °C  
TJ = 25 °C  
Average rectified forward current  
IF(AV)  
8
FULL-PAK  
T
A
Non-repetitive peak surge current  
Peak repetitive forward current  
IFSM  
IFM  
77  
16  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.5  
1.6  
0.3  
30  
6
3.2  
2.0  
40  
400  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
pF  
nH  
Measured lead to lead 5 mm from package body  
8
-
Document Number: 93171  
Revision: 18-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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