Datasheet > VS-8ESU06-M3

VS-8ESU06-M3

更新时间： 2024-11-02 14:55:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	130K
描述
Ultrafast Rectifier, 8 A FRED Pt?

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VS-8ESU06-M3 数据手册

VS-8ESU06-M3

Vishay Semiconductors

www.vishay.com

Ultrafast Rectifier, 8 A FRED Pt^®

FEATURES

• Ultrafast recovery time, reduced Q_rr, and soft

recovery

eSMP Series

• 175 °C maximum operating junction temperature

• For PFC, CRM snubber operation

• Low forward voltage drop

Anode 1

Anode 2

Cathode

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMPC (TO-277A)

• Meets JESD 201 class 2 whisker test

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

3D Models

DESCRIPTION / APPLICATIONS

State of the art ultrafast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and ultra fast recovery time.

PRIMARY CHARACTERISTICS

I_F(AV)

8 A

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

V_R

600 V

1.01 V

42 ns

175 °C

V_Fat I_F

t_{rr (typ.)}

T_Jmax.

These devices are intended for use in PFC, boost, lighting,

in the AC/DC section of SMPS, freewheeling and clamp

diodes.

Package

SMPC (TO-277A)

Single

Circuit configuration

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element and snubbers.

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

600

I_F(AV)

T_Sp= 137 °C

T_J= 25 °C

I_FSM

120

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

600

1.16

1.01

1.36

1.24

I_F= 8 A

Forward voltage

V_F

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

150

C_T

Revision: 23-Feb-2022

Document Number: 96982

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与VS-8ESU06-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-8ETH03-1HM3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8ETH03-1-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8ETH03-1PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, TO-262AA, HALOGEN FREE AND
VS-8ETH03-1TRLPBF	VISHAY	获取价格	RECTIFIER DIODE
VS-8ETH03-1TRRPBF	VISHAY	获取价格	Rectifier Diode,
VS-8ETH03-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8ETH03-N3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, TO-220AC, HALOGEN FREE AND
VS-8ETH03SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPL
VS-8ETH03STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPL
VS-8ETH03STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPL

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