Datasheet > VS-8ETH06PBF

VS-8ETH06PBF

更新时间： 2024-11-07 12:27:47

品牌	Logo	应用领域
尼吉康 - NICHICON		二极管局域网软恢复二极管超快速软恢复二极管
页数	文件大小	规格书
9页	194K
描述
Hyperfast Rectifier, 8 A FRED PtÂ®

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-8ETH06PBF 数据手册

VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3

www.vishay.com

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

TO-220AC

TO-220 FULL-PAK

• Fully isolated package (V_INS= 2500 V_RMS

)

Base

cathode

• UL E78996 pending

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

Cathode

Anode

DESCRIPTION/APPLICATIONS

VS-8ETH06PbF

VS-8ETH06-N3

VS-8ETH06FPPbF

VS-8ETH06FP-N3

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

PRODUCT SUMMARY

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

Package

TO-220AC, TO-220FP

I_F(AV)

8 A

600 V

V_R

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS, inverters or as freewheeling

diodes.

V_Fat I_F

2.4 V

t_rrtyp.

18 ns

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

T_Jmax.

Diode variation

175 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Repetitive peak reverse voltage

V_RRM

600

T_C= 144 °C

T_C= 108 °C

T_J= 25 °C

Average rectified forward current

I_F(AV)

FULL-PAK

100

Non-repetitive peak surge current

Repetitive peak forward current

I_FSM

FULL-PAK

I_FM

Operating junction and storage temperatures

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

600

2.0

1.3

0.3

2.4

1.8

500

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Revision: 02-Jan-12

Document Number: 94026

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与VS-8ETH06PBF相关器件

型号	品牌	获取价格	描述	数据表
VS-8ETH06S-M3	VISHAY	获取价格	DIODE GEN PURP 600V 8A D2PAK
VS-8ETH06SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPL
VS-8ETH06STRL-M3	VISHAY	获取价格	DIODE GEN PURP 600V 8A TO263AB
VS-8ETH06STRLPBF	VISHAY	获取价格	暂无描述
VS-8ETH06STRR-M3	VISHAY	获取价格	DIODE GEN PURP 600V 8A TO263AB
VS-8ETH06STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPL
VS-8ETL06-1-M3	VISHAY	获取价格	Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 8 A FRED Pt?
VS-8ETL06-1PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-262AA, TO-262, 3 PIN
VS-8ETL06-1TRRPBF	VISHAY	获取价格	Rectifier Diode,
VS-8ETL06FP-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode

与VS-8ETH06PBF相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

19
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

16
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

39
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-8ETH06PBF

VS-8ETH06PBF 数据手册

与VS-8ETH06PBF相关器件

与VS-8ETH06PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-8ETH06PBF

VS-8ETH06PBF 数据手册

与VS-8ETH06PBF相关器件

与VS-8ETH06PBF相关文章

您还可以找

您在本页遇到什么问题？