Datasheet > VS-8ETU04-1-M3

VS-8ETU04-1-M3

更新时间： 2023-12-06 20:10:12

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	223K
描述
Ultrafast Rectifier, 8 A FRED Pt?

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VS-8ETU04-1-M3 数据手册

VS-8ETU04S-M3, VS-8ETU04-1-M3

www.vishay.com

Vishay Semiconductors

Ultrafast Rectifier, 8 A FRED Pt^®

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

D²PAK (TO-263AB)

TO-262AA

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Base

cathode

DESCRIPTION / APPLICATIONS

Vishay Semiconductors FRED Pt^®series are the state of the

art ultrafast recovery rectifiers specifically designed with

optimized performance of forward voltage drop and ultrafast

recovery time.

The planar structure and the platinum doped life time

control, guarantee the best overall performance,

ruggedness and reliability characteristics.

N/C

Anode

N/C

Anode

VS-8ETU04S-M3

VS-8ETU04-1-M3

These devices are intended for use in the output rectification

stage of SMPS, UPS, DC/DC converters as well as

freewheeling diode in low voltage inverters and chopper

motor drives.

PRIMARY CHARACTERISTICS

I_F(AV)

8 A

V_R

400 V

V_Fat I_F

0.94 V

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

_rrtyp.

35 ns

T_Jmax.

Package

175 °C

D²PAK (TO-263AB), TO-262AA

Single

Circuit configuration

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

MAX.

UNITS

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Repetitive peak forward current

Operating junction and storage temperatures

400

I_F(AV)

T_C= 155 °C

T_C= 25 °C

100

I_FSM

I_FRM

T_J, T_Stg

-65 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

400

1.19

0.94

0.2

1.3

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

1.0

V_R= V_Rrated

μA

Reverse leakage current

T_J= 150 °C, V_R= V_Rrated

V_R= 400 V

500

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Revision: 21-Dec-2021

Document Number: 96388

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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型号	品牌	描述	获取价格	数据表
VS-8ETU04-1PBF	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-262AA, HALOGEN FREE AND	获取价格
VS-8ETU04HN3	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-220AC, HALOGEN FREE AND	获取价格
VS-8ETU04-M3	VISHAY	Ultrafast Rectifier, 8 A FRED Pt?	获取价格
VS-8ETU04PBF	VISHAY	DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R	获取价格
VS-8ETU04STRLHM3	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-263AB, D2PAK-3/2	获取价格
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