VS-8ETU12-M3
Vishay Semiconductors
www.vishay.com
Ultrafast Rectifier, 8 A FRED Pt®
FEATURES
Base
cathode
2
2
• Ultrafast and soft recovery time
• Optimized forward voltage drop
• Polyimide passivation
• 175 °C maximum operating junction temperature
• Rugged design
1
1
3
Cathode
Anode
3
• Good thermal performance
• Meets JESD 201 class 1A whisker test
TO-220AC 2L
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
Ultrafast recovery rectifiers designed with optimized forward
voltage drop, ultrafast recovery time, and soft recovery.
Polyimide passivated with a planar structure and platinum
doped life time control guarantee ruggedness, reliability,
IF(AV)
8 A
VR
1200 V
1.95 V
42 ns
VF at IF at 125 °C
t
rr typ.
and offer
a solid value for efficiency and thermal
performance.
TJ max.
Package
175 °C
These devices are intended for use in boost stage in the
AC/DC section of SMPS, high frequency output rectification
of battery chargers, inverters for solar inverters or as
freewheeling diodes in motor drives.
TO-220AC 2L
Single
Circuit configuration
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
UNITS
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
1200
V
IF(AV)
TC = 140 °C, D = 0.50
TC = 25 °C, tp = 10 ms, sine wave
8
IFSM
80
16
A
IFRM
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 200 μA
IF = 8 A
1200
-
-
V
-
-
-
-
-
-
2.05
1.95
-
2.55
2.37
55
Forward voltage
VF
IR
IF = 8 A, TJ = 125 °C
VR = VR rated
Reverse leakage current
μA
TJ = 125 °C, VR = VR rated
VR = 200 V
-
100
-
Junction capacitance
Series inductance
CT
LS
8
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 13-Jan-2022
Document Number: 96208
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000