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VS-8ETX06STRLPBF PDF预览

VS-8ETX06STRLPBF

更新时间: 2024-11-07 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
9页 272K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3

VS-8ETX06STRLPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE应用:HYPERFAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:110 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.024 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

VS-8ETX06STRLPBF 数据手册

 浏览型号VS-8ETX06STRLPBF的Datasheet PDF文件第2页浏览型号VS-8ETX06STRLPBF的Datasheet PDF文件第3页浏览型号VS-8ETX06STRLPBF的Datasheet PDF文件第4页浏览型号VS-8ETX06STRLPBF的Datasheet PDF文件第5页浏览型号VS-8ETX06STRLPBF的Datasheet PDF文件第6页浏览型号VS-8ETX06STRLPBF的Datasheet PDF文件第7页 
VS-8ETX06SPbF, VS-8ETX06-1PbF  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
TO-263AB (D2PAK)  
TO-262AA  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Base  
cathode  
• AEC-Q101 qualified  
2
2
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in PFC boost stage in  
the AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
3
1
3
1
N/C  
Anode  
N/C  
Anode  
VS-8ETX06SPbF  
VS-8ETX06-1PbF  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
8 A  
600 V  
VR  
VF at IF  
1.4 V  
t
rr typ.  
15 ns  
TJ max.  
175 °C  
Single die  
Diode variation  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 143 °C  
TJ = 25 °C  
8
110  
IFSM  
A
IFM  
18  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.3  
1.4  
0.3  
35  
3.0  
1.7  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 10-Jul-15  
Document Number: 94033  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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