Datasheet > VS-8ETX06PBF

VS-8ETX06PBF

更新时间： 2024-11-24 12:05:15

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管局域网软恢复二极管超快速软恢复二极管
页数	文件大小	规格书
10页	1174K
描述
Hyperfast Rectifier

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数据手册

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VS-8ETX06PBF 数据手册

Bulletin PD-20766 rev. C 09/06

8ETX06

8ETX06S

8ETX06-1

8ETX06FP

Hyperfast Rectifier

Features

t_rr= 15ns typ.

I_F(AV)= 8Amp

V_R= 600V

•

Hyperfast Recovery Time

Low Forward Voltage Drop

Low Leakage Current

175°C Operating Junction Temperature

UL E78996 approved

Description/ Applications

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast

recover time, and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling

diodes.

The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

Absolute Maximum Ratings

Parameters

Max

600

Units

V_RRM

I_F(AV)

Peak Repetitive Reverse Voltage

Average Rectified Forward Current @ T_C= 143°C

@T_C=106°C(FULLPACK)

I_FSM

I_FM

Non Repetitive Peak Surge Current @ T_J= 25°C

Peak Repetitive Forward Current

110

T_J, T_STGOperating Junction and Storage Temperatures

- 65 to 175

°C

Case Styles

8ETX06FP

8ETX06

8ETX06S

8ETX06-1

Base

Cathode

Base

Cathode

Anode

N/C

Anode

N/C

Cathode

Anode

TO-220AC

www.irf.com

D²PAK

TO-262

TO-220 FULLPACK

12 3 4 5 6 7...10

中文翻译

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