Datasheet > VS-8EWF02STRR-M3

VS-8EWF02STRR-M3

更新时间： 2024-01-05 01:51:20

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	236K
描述
DIODE GEN PURP 200V 8A D-PAK

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VS-8EWF02STRR-M3 数据手册

VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3

www.vishay.com

Vishay Semiconductors

Surface Mount Fast Soft Recovery Rectifier Diode, 8 A

FEATURES

Base

cathode

• Glass passivated pellet chip junction

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Anode

TO-252AA (D-PAK)

APPLICATIONS

• Output rectification and freewheeling diode in inverters,

choppers and converters

PRODUCT SUMMARY

Package

TO-252AA (D-PAK)

• Input rectifications where severe restrictions on

conducted EMI should be met

I_F(AV)

8 A

200 V, 400 V, 600 V

1.2 V

V_R

V_Fat I_F

I_FSM

DESCRIPTION

150 A

The VS-8EWF..S-M3 fast soft recovery rectifier series has

been optimized for combined short reverse recovery time,

low forward voltage drop and low leakage current.

t_rr

55 ns

T_Jmax.

Diode variation

Snap factor

150 °C

The glass passivation ensures stable reliable operation in

the most severe temperature and power cycling conditions.

Single die

0.5

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

V_F

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

200 to 600

150

8 A, T_J= 25 °C

1 A, 100 A/μs

Range

1.2

t_rr

°C

T_J

-40 to +150

VOLTAGE RATINGS

V_RRM, MAXIMUM PEAK

REVERSE VOLTAGE

V_RSM, MAXIMUM NON-REPETITIVE

I_RRM

AT 150 °C

PART NUMBER

PEAK REVERSE VOLTAGE

VS-8EWF02S-M3

VS-8EWF04S-M3

VS-8EWF06S-M3

200

400

600

300

500

700

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_C= 96 °C, 180° conduction half sine wave

VALUES

UNITS

Maximum average forward current

I_F(AV)

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

125

150

Maximum peak one cycle

non-repetitive surge current

I_FSM

Maximum I²t for fusing

I²t

A²s

110

Maximum I²t for fusing

I²t

1100

A²s

16-Jan-17

Document Number: 93375

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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