Datasheet > VS-8EVL06HM3

VS-8EVL06HM3

更新时间： 2024-11-25 14:55:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	188K
描述
Ultralow VF Ultrafast Rectifier, 8 A FRED Pt?

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VS-8EVL06HM3 数据手册

VS-8EVL06HM3

Vishay Semiconductors

www.vishay.com

Ultralow V_FUltrafast Rectifier, 8 A FRED Pt^®

FEATURES

eSMP^®Series

Heatsink

• Ultrafast recovery time, extremely low V_Fand

soft recovery

• For PFC CCM operation

• Low forward voltage drop, low power losses

• Low leakage current

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

Pin 1

Pin 2

• AEC-Q101 qualified

- meets JESD 201 class 2 whisker test

SlimDPAK (TO-252AE)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

3D Models

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS inverters, or as freewheeling

diodes. Their extremely optimized stored charge and low

recovery current minimize the switching losses and reduce

over dissipation in the switching element and snubbers.

PRIMARY CHARACTERISTICS

I_F(AV)

8 A

V_R

600 V

0.98 V

34 ns

175 °C

V_Fat I_F

t_rr(typ.)

T_Jmax.

MECHANICAL DATA

Case: SlimDPAK (TO-252AE)

Molding compound meets UL 94 V-0 flammability rating

Package

SlimDPAK (TO-252AE)

Single

Terminals: matte tin plated leads, solderable per

J-STD-002

Circuit configuration

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

600

I_F(AV)

T_C= 154 °C

T_J= 25 °C, 10 ms sine pulse wave

I_FSM

130

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

600

1.15

0.98

1.35

1.15

Forward voltage

V_F

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

100

C_T

Revision: 18-Feb-2022

Document Number: 96149

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-8EVL06HM3相关器件

型号	品牌	获取价格	描述	数据表
VS-8EVL06-M3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED Pt?
VS-8EVX06HM3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8EVX06-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8EWF02S-M3	VISHAY	获取价格	Surface Mountable Fast Soft Recovery Diode, 8A
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3	VISHAY	获取价格	Surface Mount Fast Soft Recovery Rectifier Diode, 8 A
VS-8EWF02SM-M3	VISHAY	获取价格	Surface Mount Fast Soft Recovery Rectifier Diode, 8 A
VS-8EWF02STRL-M3	VISHAY	获取价格	DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWF02STR-M3	VISHAY	获取价格	DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWF02STRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, P
VS-8EWF02STRR-M3	VISHAY	获取价格	DIODE GEN PURP 200V 8A D-PAK

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