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VS-8EWF10STRL-M3 PDF预览

VS-8EWF10STRL-M3

更新时间: 2024-11-24 21:22:03
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 237K
描述
DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, Rectifier Diode

VS-8EWF10STRL-M3 技术参数

生命周期:Active零件包装代码:TO-252AA
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.31
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:110 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向恢复时间:0.27 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-8EWF10STRL-M3 数据手册

 浏览型号VS-8EWF10STRL-M3的Datasheet PDF文件第2页浏览型号VS-8EWF10STRL-M3的Datasheet PDF文件第3页浏览型号VS-8EWF10STRL-M3的Datasheet PDF文件第4页浏览型号VS-8EWF10STRL-M3的Datasheet PDF文件第5页浏览型号VS-8EWF10STRL-M3的Datasheet PDF文件第6页浏览型号VS-8EWF10STRL-M3的Datasheet PDF文件第7页 
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A  
FEATURES  
Base  
• Glass passivated pellet chip junction  
cathode  
+
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• Material categorization:  
2
for definitions of compliance please see  
3
www.vishay.com/doc?99912  
1
1
3
TO-252AA (D-PAK)  
-
-
Anode  
Anode  
APPLICATIONS  
• Output rectification and freewheeling diode in inverters,  
choppers and converters  
PRODUCT SUMMARY  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
Package  
TO-252AA (D-PAK)  
8 A  
IF(AV)  
VR  
1000 V, 1200 V  
1.3 V  
DESCRIPTION  
VF at IF  
IFSM  
The VS-8EWF..S-M3 fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time,  
low forward voltage drop and low leakage current.  
150 A  
trr  
80 ns  
TJ max.  
Diode variation  
Snap factor  
150 °C  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
8
1000/1200  
150  
A
V
A
8 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.3  
V
trr  
80  
ns  
°C  
TJ  
-40 to +150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-8EWF10S-M3  
VS-8EWF12S-M3  
1000  
1200  
1100  
1300  
4
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
8
UNITS  
Maximum average forward current  
IF(AV)  
TC = 96 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
125  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
150  
78  
Maximum I2t for fusing  
I2t  
A2s  
110  
Maximum I2t for fusing  
I2t  
1100  
A2s  
Revision: 24-Nov-16  
Document Number: 93377  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-8EWF10STRL-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-8EWF10S-M3 VISHAY

完全替代

Surface Mountable Fast Soft Recovery Diode, 8A
8EWF10STRL VISHAY

完全替代

Surface Mountable Fast Soft Recovery Diode, 8 A

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