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VS-8EWF12SM-M3

更新时间： 2024-11-02 02:50:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 229K
描述
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A

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VS-8EWF12SM-M3 数据手册

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VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A  
FEATURES  
Base  
• Glass passivated pellet chip junction  
cathode  
+
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• Material categorization:  
2
for definitions of compliance please see  
3
www.vishay.com/doc?99912  
1
1
3
TO-252AA (D-PAK)  
-
-
Anode  
Anode  
APPLICATIONS  
• Output rectification and freewheeling diode in inverters,  
choppers and converters  
PRODUCT SUMMARY  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
Package  
TO-252AA (D-PAK)  
8 A  
IF(AV)  
VR  
1000 V, 1200 V  
1.3 V  
DESCRIPTION  
VF at IF  
IFSM  
The VS-8EWF..S-M3 fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time,  
low forward voltage drop and low leakage current.  
150 A  
trr  
80 ns  
TJ max.  
Diode variation  
Snap factor  
150 °C  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
8
1000/1200  
150  
A
V
A
8 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.3  
V
trr  
80  
ns  
°C  
TJ  
-40 to +150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-8EWF10S-M3  
VS-8EWF12S-M3  
1000  
1200  
1100  
1300  
4
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
8
UNITS  
Maximum average forward current  
IF(AV)  
TC = 96 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
125  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
150  
78  
Maximum I2t for fusing  
I2t  
A2s  
110  
Maximum I2t for fusing  
I2t  
1100  
A2s  
Revision: 16-Jan-17  
Document Number: 93377  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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与VS-8EWF12SM-M3相关器件

型号 品牌 获取价格 描述 数据表
VS-8EWF12STR VISHAY

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VS-8EWF12STRPBF VISHAY

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 		DIODE 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DP
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VS-8EWH02FNTRL-M3 VISHAY

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 		DIODE GEN PURP 200V 8A D-PAK
VS-8EWH02FNTR-M3 VISHAY

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 		DIODE GEN PURP 200V 8A D-PAK
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