Datasheet > VS-8EWH06FNM3

VS-8EWH06FNM3

更新时间： 2024-11-08 02:51:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	157K
描述
Hyperfast Rectifier, 8 A FRED PtÂ®

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VS-8EWH06FNM3 数据手册

VS-8EWH06FNHM3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyper fast recovery time, reduced Q_rrand soft

recovery

2, 4

• 175 °C maximum operating junction temperature

• For PFC CRM/CCM operation

• Low forward voltage drop

N/C

Anode

• Low leakage current

DPAK (TO-252AA)

• AEC-Q101 qualified

• Meets JESD 201 class 2 whisker test

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

8 A

V_R

600 V

1.3 V

DESCRIPTION / APPLICATIONS

V_Fat I_F

t_rr(typ.)

T_Jmax.

State of the art hyper fast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

18 ns

175 °C

Package

DPAK (TO-252AA)

Single

Circuit configuration

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce

over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Peak repetitive forward current

Operating junction and storage temperatures

600

T_C= 143 °C

I_FSM

T_J= 25 °C

I_FM

T_C= 143 °C, f = 20 kHz, d = 50 %

T_J, T_Stg

-65 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

600

2.0

1.3

2.4

1.8

500

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

Revision: 11-Apr-18

Document Number: 94739

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-8EWH06FNM3相关器件

型号	品牌	获取价格	描述	数据表
VS-8EWH06FN-M3	VISHAY	获取价格	DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWH06FNTRHM3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt
VS-8EWH06FNTRLHM3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt
VS-8EWH06FNTRL-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt
VS-8EWH06FNTR-M3	VISHAY	获取价格	DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWH06FNTRRHM3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt
VS-8EWH06FNTRR-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt
VS-8EWL06FN-M3	VISHAY	获取价格	DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWL06FNTRL-M3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED Pt
VS-8EWL06FNTR-M3	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED Pt

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