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VS-8EWH02FNTRL-M3

更新时间： 2024-11-20 22:58:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 152K
描述
DIODE GEN PURP 200V 8A D-PAK

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VS-8EWH02FNTRL-M3 数据手册

 浏览型号VS-8EWH02FNTRL-M3的Datasheet PDF文件第2页浏览型号VS-8EWH02FNTRL-M3的Datasheet PDF文件第3页浏览型号VS-8EWH02FNTRL-M3的Datasheet PDF文件第4页浏览型号VS-8EWH02FNTRL-M3的Datasheet PDF文件第5页浏览型号VS-8EWH02FNTRL-M3的Datasheet PDF文件第6页浏览型号VS-8EWH02FNTRL-M3的Datasheet PDF文件第7页 
VS-8EWH02FN-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
2, 4  
• 175 °C max. operating junction temperature  
• Output rectification freewheeling  
• Low forward voltage drop reduced Qrr and soft  
recovery  
1
N/C  
3
Anode  
• Low leakage current  
DPAK (TO-252AA)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
State of the art hyperfast recovery rectifiers specifically  
designed with optimized performance of forward voltage  
drop and hyperfast recovery time.  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
PRIMARY CHARACTERISTICS  
IF(AV)  
8 A  
VR  
200 V  
0.75 V  
23 ns  
VF at IF  
trr (typ.)  
TJ max.  
175 °C  
Package  
DPAK (TO-252AA)  
Single  
Circuit configuration  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
200  
V
TC = 156 °C  
8
140  
IFSM  
TJ = 25 °C  
A
IFM  
TC = 156 °C, f = 20 kHz, d = 50 %  
16  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
200  
-
-
V
-
-
-
-
-
-
0.91  
0.75  
-
0.97  
0.85  
5
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
6
60  
-
Junction capacitance  
Series inductance  
CT  
LS  
22  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 11-Apr-18  
Document Number: 93259  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

中文翻译

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VS-8EWH02FNTRL-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-8EWH02FNTRR-M3 VISHAY

完全替代

 DIODE GEN PURP 200V 8A D-PAK
VS-8EWH02FN-M3 VISHAY

类似代替

 Hyperfast Rectifier, 8 A FRED Pt®

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