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VS-8EWF12SLHM3

更新时间: 2024-11-02 14:53:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 214K
描述
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A

VS-8EWF12SLHM3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DPAK-3/2Reach Compliance Code:unknown
风险等级:1.57其他特性:LOW LEAKAGE CURRENT
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:1200 V最大反向电流:100 µA
最大反向恢复时间:0.27 µs表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-8EWF12SLHM3 数据手册

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VS-8EWF12SLHM3  
Vishay Semiconductors  
www.vishay.com  
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A  
FEATURES  
Base  
• Glass passivated pellet chip junction  
cathode  
+
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• AEC-Q101 qualified  
2
• Meets JESD 201 class 2 whisker test  
• Flexible solution for reliable AC power rectification  
3
1
3
1
-
-
• High surge, low VF rugged blocking diode for DC charging  
stations  
Anode  
Anode  
DPAK (TO-252AA)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
APPLICATIONS  
IF(AV)  
8 A  
• On-board and off-board EV / HEV battery chargers  
• Renewable energy inverters  
VR  
1200 V  
1.3 V  
VF at IF  
IFSM  
150 A  
80 ns  
DESCRIPTION  
trr  
The VS-8EWF12SLHM3 fast soft recovery rectifier series  
has been optimized for combined short reverse recovery  
time, low forward voltage drop and low leakage current.  
TJ max.  
150 °C  
Package  
Circuit configuration  
Snap factor  
DPAK (TO-252AA)  
Single  
0.6  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
8
1200  
150  
A
V
A
8 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.3  
V
trr  
80  
ns  
°C  
TJ  
-40 to +150  
VOLTAGE RATINGS  
PART NUMBER  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PEAK REVERSE VOLTAGE  
V
VS-8EWF12SLHM3  
1200  
1300  
4
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
8
UNITS  
Maximum average forward current  
IF(AV)  
TC = 96 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
125  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
150  
78  
Maximum I2t for fusing  
I2t  
A2s  
110  
Maximum I2t for fusing  
I2t  
1100  
A2s  
Revision: 09-Aug-2022  
Document Number: 96490  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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