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VS-8EWF04STRRPBF PDF预览

VS-8EWF04STRRPBF

更新时间: 2024-11-27 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 228K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

VS-8EWF04STRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PSSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.74
其他特性:FREEWHEELING DIODE, LOW LEAKAGE CURRENT应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:400 V
最大反向电流:100 µA最大反向恢复时间:0.2 µs
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-8EWF04STRRPBF 数据手册

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VS-8EWF..SPbF Soft Recovery Series  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A  
FEATURES  
Base  
• Meets MSL level 1, per J-STD-020, LF maximum  
of 260 °C  
cathode  
+
2
• Material categorization: For definitions of  
compliance please see www.vishay.com/doc?99912  
2
3
DESCRIPTION  
1
1
3
The VS-8EWF..SPbF fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time,  
low forward voltage drop and low leakage current.  
D-PAK  
-
-
Anode  
Anode  
PRODUCT SUMMARY  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
Package  
D-PAK (TO-252AA)  
IF(AV)  
8 A  
200 V, 400 V, 600 V  
1.2 V  
This series is designed and qualified for industrial level.  
VR  
APPLICATIONS  
VF at IF  
IFSM  
• Output rectification and freewheeling diode in inverters,  
choppers and converters  
150 A  
trr  
55 ns  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
TJ max.  
Diode variation  
Snap factor  
150 °C  
Single die  
0.5  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
8
200 to 600  
150  
A
V
A
8 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.2  
V
trr  
55  
ns  
°C  
TJ  
-40 to 150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
8EWF02SPbF  
8EWF04SPbF  
8EWF06SPbF  
200  
400  
600  
300  
500  
700  
3
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 96 °C, 180° conduction half sine wave  
VALUES  
8
UNITS  
Maximum average forward current  
IF(AV)  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
125  
150  
A
Maximum peak one cycle  
IFSM  
non-repetitive surge current  
78  
Maximum I2t for fusing  
I2t  
A2s  
110  
Maximum I2t for fusing  
I2t  
1100  
A2s  
Revision: 18-Dec-13  
Document Number: 94108  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-8EWF04STRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-8EWF04STRR-M3 VISHAY

完全替代

DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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