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VS-8EWF06STR-M3 PDF预览

VS-8EWF06STR-M3

更新时间: 2024-11-24 19:38:07
品牌 Logo 应用领域
威世 - VISHAY 快速软恢复高电源软恢复二极管快速软恢复二极管高功率电源
页数 文件大小 规格书
8页 251K
描述
DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode

VS-8EWF06STR-M3 技术参数

生命周期:Active零件包装代码:TO-252AA
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.3
Is Samacsys:N其他特性:FREEWHEELING DIODE, LOW LEAKAGE CURRENT
应用:FAST SOFT RECOVERY HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:120 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.055 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

VS-8EWF06STR-M3 数据手册

 浏览型号VS-8EWF06STR-M3的Datasheet PDF文件第2页浏览型号VS-8EWF06STR-M3的Datasheet PDF文件第3页浏览型号VS-8EWF06STR-M3的Datasheet PDF文件第4页浏览型号VS-8EWF06STR-M3的Datasheet PDF文件第5页浏览型号VS-8EWF06STR-M3的Datasheet PDF文件第6页浏览型号VS-8EWF06STR-M3的Datasheet PDF文件第7页 
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A  
FEATURES  
Base  
cathode  
• Glass passivated pellet chip junction  
+
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
2
• Material categorization:  
for definitions of compliance please see  
2
3
www.vishay.com/doc?99912  
1
3
1
-
-
Anode  
Anode  
TO-252AA (D-PAK)  
APPLICATIONS  
• Output rectification and freewheeling diode in inverters,  
choppers and converters  
PRODUCT SUMMARY  
Package  
TO-252AA (D-PAK)  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
IF(AV)  
8 A  
200 V, 400 V, 600 V  
1.2 V  
VR  
VF at IF  
IFSM  
DESCRIPTION  
150 A  
The VS-8EWF..S-M3 fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time,  
low forward voltage drop and low leakage current.  
trr  
55 ns  
TJ max.  
Diode variation  
Snap factor  
150 °C  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
Single die  
0.5  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
8
200 to 600  
150  
A
V
A
8 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.2  
V
trr  
55  
ns  
°C  
TJ  
-40 to +150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-8EWF02S-M3  
VS-8EWF04S-M3  
VS-8EWF06S-M3  
200  
400  
600  
300  
500  
700  
3
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 96 °C, 180° conduction half sine wave  
VALUES  
8
UNITS  
Maximum average forward current  
IF(AV)  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
125  
150  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
78  
Maximum I2t for fusing  
I2t  
A2s  
110  
Maximum I2t for fusing  
I2t  
1100  
A2s  
16-Jan-17  
Document Number: 93375  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-8EWF06STR-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-8EWF06STRL-M3 VISHAY

完全替代

DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWF06S-M3 VISHAY

完全替代

DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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