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VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 PDF预览

VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3

更新时间： 2024-11-25 14:55:23
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威世 - VISHAY /
页数 文件大小 规格书
8页 240K
描述
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A

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VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 数据手册

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VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A  
FEATURES  
Base  
cathode  
• Glass passivated pellet chip junction  
+
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
2
• Material categorization:  
2
for definitions of compliance please see  
www.vishay.com/doc?99912  
3
1
3
1
-
-
Anode  
Anode  
DPAK (TO-252AA)  
APPLICATIONS  
• Output rectification and freewheeling diode in inverters,  
choppers and converters  
PRIMARY CHARACTERISTICS  
IF(AV)  
8 A  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
VR  
VF at IF  
200 V, 400 V, 600 V  
1.2 V  
150 A  
IFSM  
DESCRIPTION  
trr  
55 ns  
The VS-8EWF..S-M3 fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time,  
low forward voltage drop and low leakage current.  
TJ max.  
150 °C  
Snap factor  
Package  
Circuit configuration  
0.5  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
DPAK (TO-252AA)  
Single  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
8
200 to 600  
150  
A
V
A
8 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.2  
V
trr  
55  
ns  
°C  
TJ  
-40 to +150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-8EWF02S-M3  
VS-8EWF04S-M3  
VS-8EWF06S-M3  
200  
400  
600  
300  
500  
700  
3
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 96 °C, 180° conduction half sine wave  
VALUES  
8
UNITS  
Maximum average forward current  
IF(AV)  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
125  
150  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
78  
Maximum I2t for fusing  
I2t  
A2s  
110  
Maximum I2√t for fusing  
I2√t  
1100  
A2√s  
Revision: 12-Apr-2018  
Document Number: 93375  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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与VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3相关器件

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VS-8EWF02SM-M3 VISHAY

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 		Surface Mount Fast Soft Recovery Rectifier Diode, 8 A
VS-8EWF02STRL-M3 VISHAY

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 		DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWF02STR-M3 VISHAY

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 		DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWF02STRPBF VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, P
VS-8EWF02STRR-M3 VISHAY

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 		DIODE GEN PURP 200V 8A D-PAK
VS-8EWF02STRRPBF VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, P
VS-8EWF04S-M3 VISHAY

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 		DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWF04STRL-M3 VISHAY

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 		DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWF04STRLPBF VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, P
VS-8EWF04STR-M3 VISHAY

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 		DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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