Datasheet > VS-8ETX6-1-M3

VS-8ETX6-1-M3

更新时间： 2024-01-30 09:12:02

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
8页	212K
描述
Rectifier Diode,

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VS-8ETX6-1-M3 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.6	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

VS-8ETX6-1-M3 数据手册

VS-8ETX06S-M3, VS-8ETX06-1-M3

www.vishay.com

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

D²PAK (TO-263AB)

TO-262AA

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Base

cathode

DESCRIPTION / APPLICATIONS

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

N/C

Anode

N/C

Anode

VS-8ETX06S-M3

VS-8ETX06-1-M3

These devices are intended for use in PFC boost stage in

the AC/DC section of SMPS, inverters or as freewheeling

diodes.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.



PRIMARY CHARACTERISTICS

I_F(AV)

8 A

V_R

600 V

V_Fat I_F

1.4 V

_rrtyp.

15 ns

175 °C

T_Jmax.

Package



D²PAK (TO-263AB), TO-262AA

Circuit configuration

Single

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

MAX.

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Peak repetitive forward current

Operating junction and storage temperatures

600

T_C= 143 °C

T_J= 25 °C

110

I_FSM

I_FM

T_J, T_Stg

-65 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

V_BR

V_R

I_R= 100 μA

I_F= 8 A

600

blocking voltage

2.3

1.4

0.3

3.0

1.7

500

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Revision: 25-Oct-17

Document Number: 96242

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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