Datasheet > VS-8ETX6-1-M3

VS-8ETX6-1-M3

更新时间： 2024-02-12 00:52:47

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
8页	212K
描述
Rectifier Diode,

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技术参数
数据手册

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VS-8ETX6-1-M3 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.6	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

VS-8ETX6-1-M3 数据手册

VS-8ETX06S-M3, VS-8ETX06-1-M3

www.vishay.com

Vishay Semiconductors

300

V_R= 390 V

T_J= 125 °C

T_J= 25 °C

250

I_F= 16 A

I_F= 8 A

I_F= 16 A

200

V_R= 390 V

T_J= 125 °C

T_J= 25 °C

I_F= 8 A

150

100

I_F= 16 A

I_F= 8 A

100

1000

dI_F/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt

dI_F/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI_F/dt

Note

(1)

Formula used: T_C= T_J- (Pd + Pd_REV) x R_thJC;

Pd = forward power loss = I_F(AV)x V_FMat (I_F(AV)/D) (see fig. 6); 

Pd_REV= inverse power loss = V_R1x I_R(1 - D); I_Rat V_R1= rated V_R



(3)

t_rr

I_F

t_a

t_b

(4)

Q_rr

(2)

I_RRM

0.5 I_RRM

(5)

di_(rec)M/dt

0.75 I_RRM

di_F/dt

(1)

(4) Q_rr- area under curve deﬁned by t_rr

(1) di_F/dt - rate of change of current

and I_RRM

through zero crossing

t_rrx I_RRM

(2) I_RRM- peak reverse recovery current

Q_rr

(3) t_rr- reverse recovery time measured

from zero crossing point of negative

going I_Fto point where a line passing

through 0.75 I_RRMand 0.50 I_RRM

extrapolated to zero current.

(5) di_(rec)M/dt - peak rate of change of

current during t_bportion of t_rr

Fig. 9 - Reverse Recovery Waveform and Definitions

Revision: 25-Oct-17

Document Number: 96242

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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