VS-8ETX06S-M3, VS-8ETX06-1-M3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
-
-
-
15
19
24
-
16
Reverse recovery time
trr
ns
17
TJ = 125 °C
40
-
IF = 8 A
dIF/dt = 200 A/μs
TJ = 25 °C
2.3
4.5
20
-
Peak recovery current
IRRM
Qrr
A
TJ = 125 °C
-
VR = 390 V
TJ = 25 °C
-
Reverse recovery charge
nC
TJ = 125 °C
100
31
-
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
-
ns
A
IF = 8 A
IRRM
Qrr
TJ = 125 °C
dIF/dt = 600 A/μs
12
-
VR = 390 V
195
-
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-65
-
175
°C
Thermal resistance,
RthJC
RthJA
RthCS
-
-
-
1.4
-
2
70
-
junction-to-case per leg
Thermal resistance,
junction-to-ambient per leg
Typical socket mount
°C/W
Thermal resistance,
case-to-heatsink
Mounting surface, flat, smooth, and
greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style D2PAK (TO-263AB)
Case style TO-262AA
8ETX06S
8ETX06-1
100
10
1
1000
100
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
10
TJ = 175 °C
TJ = 150 °C
1
TJ = 25 °C
0.1
TJ = 25 °C
0.01
0.001
0.0001
0.1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Revision: 25-Oct-17
Document Number: 96242
2
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