5秒后页面跳转
VS-8ETX6-1-M3 PDF预览

VS-8ETX6-1-M3

更新时间: 2024-01-05 01:18:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 212K
描述
Rectifier Diode,

VS-8ETX6-1-M3 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.6二极管类型:RECTIFIER DIODE
Base Number Matches:1

VS-8ETX6-1-M3 数据手册

 浏览型号VS-8ETX6-1-M3的Datasheet PDF文件第1页浏览型号VS-8ETX6-1-M3的Datasheet PDF文件第3页浏览型号VS-8ETX6-1-M3的Datasheet PDF文件第4页浏览型号VS-8ETX6-1-M3的Datasheet PDF文件第5页浏览型号VS-8ETX6-1-M3的Datasheet PDF文件第6页浏览型号VS-8ETX6-1-M3的Datasheet PDF文件第7页 
VS-8ETX06S-M3, VS-8ETX06-1-M3  
www.vishay.com  
Vishay Semiconductors  
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V  
IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
-
-
-
-
-
-
-
15  
19  
24  
-
16  
Reverse recovery time  
trr  
ns  
17  
TJ = 125 °C  
40  
-
IF = 8 A  
dIF/dt = 200 A/μs  
TJ = 25 °C  
2.3  
4.5  
20  
-
Peak recovery current  
IRRM  
Qrr  
A
TJ = 125 °C  
-
VR = 390 V  
TJ = 25 °C  
-
Reverse recovery charge  
nC  
TJ = 125 °C  
100  
31  
-
Reverse recovery time  
Peak recovery current  
Reverse recovery charge  
trr  
-
ns  
A
IF = 8 A  
IRRM  
Qrr  
TJ = 125 °C  
dIF/dt = 600 A/μs  
12  
-
VR = 390 V  
195  
-
nC  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
-65  
-
175  
°C  
Thermal resistance,   
RthJC  
RthJA  
RthCS  
-
-
-
1.4  
-
2
70  
-
junction-to-case per leg  
Thermal resistance,   
junction-to-ambient per leg  
Typical socket mount  
°C/W  
Thermal resistance,   
case-to-heatsink  
Mounting surface, flat, smooth, and  
greased  
0.5  
-
-
2.0  
-
-
g
Weight  
0.07  
oz.  
6.0  
(5.0)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style D2PAK (TO-263AB)  
Case style TO-262AA  
8ETX06S  
8ETX06-1  
100  
10  
1
1000  
100  
TJ = 175 °C  
TJ = 150 °C  
TJ = 125 °C  
TJ = 100 °C  
10  
TJ = 175 °C  
TJ = 150 °C  
1
TJ = 25 °C  
0.1  
TJ = 25 °C  
0.01  
0.001  
0.0001  
0.1  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
0
100  
200  
300  
400  
500  
600  
VF - Forward Voltage Drop (V)  
VR - Reverse Voltage (V)  
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
Revision: 25-Oct-17  
Document Number: 96242  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与VS-8ETX6-1-M3相关器件

型号 品牌 描述 获取价格 数据表
VS-8ETX6S-M3 VISHAY Rectifier Diode,

获取价格

VS-8ETX6STRL-M3 VISHAY Rectifier Diode, D2PAK-3/2

获取价格

VS-8ETX6STRR-M3 VISHAY Rectifier Diode, D2PAK-3/2

获取价格

VS-8ETXFP06 VISHAY DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220, FULL PACK-2, Rectifier Diode

获取价格

VS-8ETXFP06PBF VISHAY DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220, ROHS COMPLIANT, FULL PACK-2, Rectifier

获取价格

VS-8EVH06HM3 VISHAY Hyperfast Rectifier, 8 A FRED Pt?

获取价格