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VS-8ETX6S-M3

更新时间： 2024-11-24 20:05:23
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 212K
描述
Rectifier Diode,

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VS-8ETX6S-M3 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.6二极管类型：RECTIFIER DIODE
Base Number Matches：1

VS-8ETX6S-M3 数据手册

 浏览型号VS-8ETX6S-M3的Datasheet PDF文件第2页浏览型号VS-8ETX6S-M3的Datasheet PDF文件第3页浏览型号VS-8ETX6S-M3的Datasheet PDF文件第4页浏览型号VS-8ETX6S-M3的Datasheet PDF文件第5页浏览型号VS-8ETX6S-M3的Datasheet PDF文件第6页浏览型号VS-8ETX6S-M3的Datasheet PDF文件第7页 
VS-8ETX06S-M3, VS-8ETX06-1-M3  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
2
1
• 175 °C operating junction temperature  
1
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C  
3
D2PAK (TO-263AB)  
3
TO-262AA  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Base  
cathode  
2
2
DESCRIPTION / APPLICATIONS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
3
1
3
1
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
N/C  
Anode  
N/C  
Anode  
VS-8ETX06S-M3  
VS-8ETX06-1-M3  
These devices are intended for use in PFC boost stage in  
the AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRIMARY CHARACTERISTICS  
IF(AV)  
8 A  
VR  
600 V  
VF at IF  
1.4 V  
t
rr typ.  
15 ns  
175 °C  
TJ max.  
Package  
D2PAK (TO-263AB), TO-262AA  
Circuit configuration  
Single  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 143 °C  
TJ = 25 °C  
8
110  
IFSM  
A
IFM  
18  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
blocking voltage  
V
-
-
-
-
-
-
2.3  
1.4  
0.3  
35  
3.0  
1.7  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 25-Oct-17  
Document Number: 96242  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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