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VS-8ETL06FP-N3 PDF预览

VS-8ETL06FP-N3

更新时间: 2024-09-18 19:32:23
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管超快速软恢复二极管局域网
页数 文件大小 规格书
9页 206K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

VS-8ETL06FP-N3 技术参数

生命周期:Active包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:HYPERFAST SOFT RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.05 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:175 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
最大反向电流:5 µA最大反向恢复时间:0.25 µs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-8ETL06FP-N3 数据手册

 浏览型号VS-8ETL06FP-N3的Datasheet PDF文件第2页浏览型号VS-8ETL06FP-N3的Datasheet PDF文件第3页浏览型号VS-8ETL06FP-N3的Datasheet PDF文件第4页浏览型号VS-8ETL06FP-N3的Datasheet PDF文件第5页浏览型号VS-8ETL06FP-N3的Datasheet PDF文件第6页浏览型号VS-8ETL06FP-N3的Datasheet PDF文件第7页 
VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
TO-220AC  
TO-220 FULL-PAK  
• Fully isolated package (VINS = 2500 VRMS  
)
Base  
cathode  
2
• UL E78996 approved  
• Designed and qualified according to  
JEDEC®-JESD 47  
Available  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
1
1
3
3
Cathode  
Cathode  
Anode  
Anode  
DESCRIPTION / APPLICATIONS  
VS-8ETH06PbF  
VS-8ETH06-N3  
VS-8ETH06FPPbF  
VS-8ETH06FP-N3  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
PRODUCT SUMMARY  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
Package  
TO-220AC, TO-220FP  
IF(AV)  
8 A  
600 V  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
VR  
VF at IF  
1.3 V  
trr typ.  
18 ns  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
TJ max.  
Diode variation  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Repetitive peak reverse voltage  
VRRM  
600  
V
TC = 144 °C  
TC = 108 °C  
TJ = 25 °C  
Average rectified forward current  
IF(AV)  
8
FULL-PAK  
90  
100  
A
Non-repetitive peak surge current  
Repetitive peak forward current  
IFSM  
FULL-PAK  
IFM  
16  
Operating junction and storage temperatures  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.0  
1.3  
0.3  
55  
2.4  
1.8  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 13-May-16  
Document Number: 94026  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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