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VS-8ETH06-1-M3 PDF预览

VS-8ETH06-1-M3

更新时间: 2024-11-02 14:55:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 225K
描述
Hyperfast Rectifier, 8 A FRED Pt?

VS-8ETH06-1-M3 数据手册

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VS-8ETH06S-M3, VS-8ETH06-1-M3  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
2
1
• 175 °C operating junction temperature  
1
2
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
3
D2PAK (TO-263AB)  
3
TO-262AA  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Base  
cathode  
2
2
DESCRIPTION / APPLICATIONS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
3
1
3
1
N/C  
Anode  
N/C  
Anode  
VS-8ETH06S-M3  
VS-8ETH06-1-M3  
These devices are intended for use in PFC boost stage in  
the AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRIMARY CHARACTERISTICS  
IF(AV)  
8 A  
VR  
600 V  
VF at IF  
1.3 V  
18 ns  
t
rr typ.  
TJ max.  
Package  
175 °C  
D2PAK (TO-263AB), TO-262AA  
Circuit configuration  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
600  
V
TC = 144 °C  
TJ = 25 °C  
8
IFSM  
90  
16  
A
IFM  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.0  
1.3  
0.3  
55  
2.4  
1.8  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 21-Dec-2021  
Document Number: 96387  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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