VS-8ETH06S-M3, VS-8ETH06-1-M3
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Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
2
1
• 175 °C operating junction temperature
1
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
3
D2PAK (TO-263AB)
3
TO-262AA
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Base
cathode
2
2
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
3
1
3
1
N/C
Anode
N/C
Anode
VS-8ETH06S-M3
VS-8ETH06-1-M3
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV)
8 A
VR
600 V
VF at IF
1.3 V
18 ns
t
rr typ.
TJ max.
Package
175 °C
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
IF(AV)
TEST CONDITIONS
MAX.
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
600
V
TC = 144 °C
TJ = 25 °C
8
IFSM
90
16
A
IFM
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 8 A
600
-
-
V
-
-
-
-
-
-
2.0
1.3
0.3
55
2.4
1.8
50
500
-
Forward voltage
VF
IR
IF = 8 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
17
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 21-Dec-2021
Document Number: 96387
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000