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VS-8ETH06FP-N3

更新时间： 2024-11-02 14:55:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 150K
描述
Hyperfast Rectifier, 8 A FRED Pt?

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VS-8ETH06FP-N3 数据手册

 浏览型号VS-8ETH06FP-N3的Datasheet PDF文件第2页浏览型号VS-8ETH06FP-N3的Datasheet PDF文件第3页浏览型号VS-8ETH06FP-N3的Datasheet PDF文件第4页浏览型号VS-8ETH06FP-N3的Datasheet PDF文件第5页浏览型号VS-8ETH06FP-N3的Datasheet PDF文件第6页浏览型号VS-8ETH06FP-N3的Datasheet PDF文件第7页 
VS-8ETH06FP-N3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
1
• Fully isolated package (VINS = 2500 VRMS  
• Designed and qualified according to JEDEC®-JESD 47  
)
2
TO-220 FullPAK 2L  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
1
2
Cathode  
Anode  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
VS-8ETH06FP-N3  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
PRIMARY CHARACTERISTICS  
IF(AV)  
8 A  
600 V  
VR  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
VF at IF  
1.3 V  
t
rr typ.  
18 ns  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
TJ max.  
Package  
175 °C  
TO-220 FullPAK 2L  
Single  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
TC = 108 °C  
VALUES  
UNITS  
Repetitive peak reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Repetitive peak forward current  
Operating junction and storage temperatures  
600  
V
8
100  
IFSM  
A
IFM  
16  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
V
-
-
-
-
-
-
2.0  
1.3  
0.3  
55  
2.4  
1.8  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
17  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 01-Aug-2023  
Document Number: 96429  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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