Datasheet > VS-8ETH06FP-N3

VS-8ETH06FP-N3

更新时间： 2024-11-01 12:27:47

品牌	Logo	应用领域
尼吉康 - NICHICON		/
页数	文件大小	规格书
9页	194K
描述
Hyperfast Rectifier, 8 A FRED PtÂ®

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VS-8ETH06FP-N3 数据手册

VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3

www.vishay.com

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

TO-220AC

TO-220 FULL-PAK

• Fully isolated package (V_INS= 2500 V_RMS

)

Base

cathode

• UL E78996 pending

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

Cathode

Anode

DESCRIPTION/APPLICATIONS

VS-8ETH06PbF

VS-8ETH06-N3

VS-8ETH06FPPbF

VS-8ETH06FP-N3

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

PRODUCT SUMMARY

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

Package

TO-220AC, TO-220FP

I_F(AV)

8 A

600 V

V_R

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS, inverters or as freewheeling

diodes.

V_Fat I_F

2.4 V

t_rrtyp.

18 ns

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

T_Jmax.

Diode variation

175 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Repetitive peak reverse voltage

V_RRM

600

T_C= 144 °C

T_C= 108 °C

T_J= 25 °C

Average rectified forward current

I_F(AV)

FULL-PAK

100

Non-repetitive peak surge current

Repetitive peak forward current

I_FSM

FULL-PAK

I_FM

Operating junction and storage temperatures

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

600

2.0

1.3

0.3

2.4

1.8

500

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Revision: 02-Jan-12

Document Number: 94026

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与VS-8ETH06FP-N3相关器件

型号	品牌	获取价格	描述	数据表
VS-8ETH06FPPbF	NICHICON	获取价格	Hyperfast Rectifier, 8 A FRED PtÂ®
VS-8ETH06HN3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8ETH06-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8ETH06-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-8ETH06-N3	NICHICON	获取价格	Hyperfast Rectifier, 8 A FRED PtÂ®
VS-8ETH06PBF	NICHICON	获取价格	Hyperfast Rectifier, 8 A FRED PtÂ®
VS-8ETH06PBF	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED PtÂ®
VS-8ETH06S-M3	VISHAY	获取价格	DIODE GEN PURP 600V 8A D2PAK
VS-8ETH06SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPL
VS-8ETH06STRL-M3	VISHAY	获取价格	DIODE GEN PURP 600V 8A TO263AB

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