Datasheet > VS-8ETH06HN3

VS-8ETH06HN3

更新时间： 2024-09-19 14:54:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	143K
描述
Hyperfast Rectifier, 8 A FRED Pt?

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VS-8ETH06HN3 数据手册

VS-8ETH06HN3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 8 A FRED Pt^®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

Base

cathode

• AEC-Q101 qualified, meets JESD 201 class 2

whisker test

Cathode

TO-220AC

Anode

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

PRODUCT SUMMARY

Package

TO-220AC

8 A

I_F(AV)

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

V_R

600 V

V_Fat I_F

1.3 V

t_rrtyp.

18 ns

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS, inverters or as freewheeling

diodes.

T_Jmax.

Diode variation

175 °C

Single die

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

VALUES

UNITS

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Repetitive peak forward current

Operating junction and storage temperatures

600

T_C= 144 °C

T_J= 25 °C

I_FSM

I_FM

T_J, T_Stg

-65 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 8 A

600

2.0

1.3

0.3

2.4

1.8

500

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Revision: 10-Jul-15

Document Number: 94768

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-8ETH06HN3相关器件

型号	品牌	获取价格	描述	数据表
VS-8ETH06-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8ETH06-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-8ETH06-N3	NICHICON	获取价格	Hyperfast Rectifier, 8 A FRED PtÂ®
VS-8ETH06PBF	NICHICON	获取价格	Hyperfast Rectifier, 8 A FRED PtÂ®
VS-8ETH06PBF	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED PtÂ®
VS-8ETH06S-M3	VISHAY	获取价格	DIODE GEN PURP 600V 8A D2PAK
VS-8ETH06SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPL
VS-8ETH06STRL-M3	VISHAY	获取价格	DIODE GEN PURP 600V 8A TO263AB
VS-8ETH06STRLPBF	VISHAY	获取价格	暂无描述
VS-8ETH06STRR-M3	VISHAY	获取价格	DIODE GEN PURP 600V 8A TO263AB

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