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VS-8ETH03STRRPBF PDF预览

VS-8ETH03STRRPBF

更新时间: 2024-11-01 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 高帧率高马力二极管
页数 文件大小 规格书
9页 273K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3

VS-8ETH03STRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:HFRHP
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-8ETH03STRRPBF 数据手册

 浏览型号VS-8ETH03STRRPBF的Datasheet PDF文件第2页浏览型号VS-8ETH03STRRPBF的Datasheet PDF文件第3页浏览型号VS-8ETH03STRRPBF的Datasheet PDF文件第4页浏览型号VS-8ETH03STRRPBF的Datasheet PDF文件第5页浏览型号VS-8ETH03STRRPBF的Datasheet PDF文件第6页浏览型号VS-8ETH03STRRPBF的Datasheet PDF文件第7页 
VS-8ETH03SPbF, VS-8ETH03-1PbF  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
TO-263AB (D2PAK)  
TO-262AA  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Base  
cathode  
• AEC-Q101 qualified  
2
2
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
Vishay Semiconductors 300 V series are the state of the art  
hyperfast recovery rectifiers designed with optimized  
performance of forward voltage drop and hyperfast  
recovery time.  
3
1
3
1
N/C  
Anode  
N/C  
Anode  
VS-8ETH03-1PbF  
VS-8ETH03SPbF  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.   
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diodes in low voltage inverters and chopper  
motor drives.   
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
8 A  
300 V  
VR  
VF at IF  
trr  
0.83 V  
35 ns  
TJ max.  
Diode variation  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
MAX.  
UNITS  
Repetitive peak reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
300  
V
IF(AV)  
TC = 155 °C  
TC = 25 °C  
8
A
IFSM  
100  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
300  
-
-
V
-
-
-
-
-
-
1.0  
0.83  
0.02  
6.0  
31  
1.25  
1.00  
20  
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 125 °C, VR = VR rated  
VR = 300 V  
200  
-
Junction capacitance  
Series inductance  
CT  
LS  
pF  
nH  
Measured lead to lead 5 mm from package body  
8
-
Revision: 09-Jul-15  
Document Number: 94025  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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