Datasheet > VS-8ESU06HM3

VS-8ESU06HM3

更新时间： 2024-11-02 14:54:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	133K
描述
Ultrafast Rectifier, 8 A FRED Pt?

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-8ESU06HM3 数据手册

VS-8ESU06HM3

Vishay Semiconductors

www.vishay.com

Ultrafast Rectifier, 8 A FRED Pt^®

FEATURES

• Ultrafast recovery time, reduced Q_rr, and soft

recovery

eSMP Series

• 175 °C maximum operating junction

temperature

Anode 1

Anode 2

• For PFC, CRM snubber operation

• Low forward voltage drop

• Low leakage current

Cathode

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMPC (TO-277A)

• Meets JESD 201 class 2 whisker test

• AEC-Q101 qualified

LINKS TO ADDITIONAL RESOURCES

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

DESCRIPTION / APPLICATIONS

State of the art ultrafast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and ultra fast recovery time.

PRIMARY CHARACTERISTICS

8 A

F(AV)

600 V

1.01 V

42 ns

175 °C

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

V at I

rr (typ.)

T max.

These devices are intended for use in PFC, boost, lighting,

in the AC/DC section of SMPS, freewheeling and clamp

diodes.

Package

SMPC (TO-277A)

Single

Circuit configuration

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element and snubbers.

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

= 137 °C

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

600

RRM

F(AV)

T = 25 °C

120

FSM

T , T

-55 to +175

°C

Stg

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

I = 100 μA

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

, V

600

1.16

1.01

1.36

1.24

I = 8 A

Forward voltage

I = 8 A, T = 150 °C

= V rated

Reverse leakage current

Junction capacitance

μA

T = 150 °C, V = V rated

150

= 600 V

Revision: 23-Feb-2022

Document Number: 96985

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与VS-8ESU06HM3相关器件

型号	品牌	获取价格	描述	数据表
VS-8ESU06-M3	VISHAY	获取价格	Ultrafast Rectifier, 8 A FRED Pt?
VS-8ETH03-1HM3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8ETH03-1-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8ETH03-1PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, TO-262AA, HALOGEN FREE AND
VS-8ETH03-1TRLPBF	VISHAY	获取价格	RECTIFIER DIODE
VS-8ETH03-1TRRPBF	VISHAY	获取价格	Rectifier Diode,
VS-8ETH03-M3	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt?
VS-8ETH03-N3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, TO-220AC, HALOGEN FREE AND
VS-8ETH03SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPL
VS-8ETH03STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPL

与VS-8ESU06HM3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-8ESU06HM3

VS-8ESU06HM3 数据手册

与VS-8ESU06HM3相关器件

与VS-8ESU06HM3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-8ESU06HM3

VS-8ESU06HM3 数据手册

与VS-8ESU06HM3相关器件

与VS-8ESU06HM3相关文章

您还可以找

您在本页遇到什么问题？