生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 12 V |
最大漏极电流 (Abs) (ID): | 4 A | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 0.049 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VEC2305 | SANYO |
获取价格 |
VEC2305 | |
VEC2307 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device | |
VEC2315 | SANYO |
获取价格 |
P-Channel Silicon MOSFETs General-Purpose Switching Device Applications | |
VEC2315 | ONSEMI |
获取价格 |
Dual P-Channel Power MOSFET | |
VEC2315_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
VEC2315-TL-H | ONSEMI |
获取价格 |
Dual P-Channel Power MOSFET | |
VEC2315-TL-W | ONSEMI |
获取价格 |
Dual P-Channel Power MOSFET | |
VEC2402 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
VEC2408 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
VEC2415 | SANYO |
获取价格 |
General-Purpose Switching Device Applications |