生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 3 A |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 0.08 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VEC2415-TL-E | ONSEMI |
获取价格 |
Power MOSFET | |
VEC2415-TL-W | ONSEMI |
获取价格 |
Power MOSFET | |
VEC2601 | SANYO |
获取价格 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device | |
VEC2601 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,3A I(D),TSOP | |
VEC2602 | SANYO |
获取价格 |
VEC2602 | |
VEC2603 | SANYO |
获取价格 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device | |
VEC2605 | SANYO |
获取价格 |
P-Channel and N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
VEC2606 | SANYO |
获取价格 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device | |
VEC2607 | SANYO |
获取价格 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device | |
VEC2609 | SANYO |
获取价格 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |