5秒后页面跳转
捷配首页

Datasheet > VEC2408
VEC2408 PDF预览

VEC2408

更新时间： 2024-11-04 03:20:19
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
4页 51K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device

阅读下载

中文翻译

获取价格

VEC2408 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：3.5 A
最大漏极电流 (ID)：3.5 A最大漏源导通电阻：0.06 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F8
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VEC2408 数据手册

 浏览型号VEC2408的Datasheet PDF文件第2页浏览型号VEC2408的Datasheet PDF文件第3页浏览型号VEC2408的Datasheet PDF文件第4页 
Ordering number : ENA0567  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
VEC2408  
Features  
• The best suited for load switching applications.  
• Low ON-resistance.  
• Composite type facilitating high-density mounting.  
• 1.8V drive.  
• Mounting high 0.75mm.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
20  
±12  
3.5  
14  
DSS  
GSS  
V
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Total Dissipation  
I
PW≤10µs, duty cycle≤1%  
A
DP  
P
Mounted on a ceramic board (900mm2✕0.8mm)1unit  
Mounted on a ceramic board (900mm2✕0.8mm)  
0.9  
1.0  
150  
W
W
°C  
°C  
D
P
T
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
20  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=20V, V =0V  
GS  
1
DSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
GSS  
V
(off)  
GS  
=10V, I =1mA  
0.4  
2.4  
37  
42  
47  
72  
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =1.5A  
4
S
D
R
(on)1  
I
D
I
D
I
D
I
D
=2A, V =4V  
GS  
47  
61  
60  
85  
mΩ  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
DS  
DS  
DS  
DS  
R
R
R
(on)2  
(on)3  
(on)4  
=1A, V =2.5V  
GS  
Static Drain-to-Source On-State Resistance  
=0.5A, V =1.8V  
GS  
79  
118  
540  
=0.1A, V =1.4V  
GS  
167  
400  
92  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : CK  
Ciss  
V
V
V
=10V, f=1MHz  
=10V, f=1MHz  
=10V, f=1MHz  
DS  
DS  
DS  
Coss  
Crss  
85  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N2206PE TI IM TB-00002396 No. A0567-1/4  
1234

中文翻译

下载PDF

与VEC2408相关器件

型号 品牌 获取价格 描述 数据表
VEC2415 SANYO

获取价格

 		General-Purpose Switching Device Applications
VEC2415 ONSEMI

获取价格

 		N-Channel Power MOSFET 60V, 3A, 80mΩ, Dual V
VEC2415-TL-E ONSEMI

获取价格

 		Power MOSFET
VEC2415-TL-W ONSEMI

获取价格

 		Power MOSFET
VEC2601 SANYO

获取价格

 		N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
VEC2601 ONSEMI

获取价格

 		TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,3A I(D),TSOP
VEC2602 SANYO

获取价格

 		VEC2602
VEC2603 SANYO

获取价格

 		N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
VEC2605 SANYO

获取价格

 		P-Channel and N-Channel Silicon MOSFET General-Purpose Switching Device Applications
VEC2606 SANYO

获取价格

 		N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

与VEC2408相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证