Datasheet > VEC2609

VEC2609

更新时间： 2024-11-04 03:20:19

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
6页	52K
描述
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

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VEC2609 数据手册

Ordering number : ENA0103

VEC2609

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications

VEC2609

Features

• The best suited for inverter applications.

• The VEC2609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,

thereby enabling high-density mounting.

• Low voltage drive.

• Mounting height 0.75mm.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

N-channel

P-channel

--12

Unit

DSS

GSS

±20

1.4

5.6

±8

--2

--8

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm²✕0.8mm)1unit

Mounted on a ceramic board (900mm²✕0.8mm)

0.8

1.0

150

°C

Channel Temperature

Storage Temperature

Tch

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

[N-channel]

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0V

µA

(BR)DSS

D GS

=30V, V =0V

DSS

GSS

=±16V, V =0V

±10

(off)

=10V, I =1mA

1.2

2.6

Forward Transfer Admittance

yfs

=10V, I =700mA

0.66

1.1

230

400

(on)1

=700mA, V =10V

300

560

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=400mA, V =4V

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Marking : CF

Ciss

=10V, f=1MHz

Coss

Crss

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92205PE MS IM TB-00001383

No. A0103-1/6

12 3 4 5 6

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与VEC2609相关器件

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VEC2610	SANYO	获取价格	N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
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VEC2612	SANYO	获取价格	N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
VEC2616	SANYO	获取价格	General-Purpose Switching Device Applications
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VEC2616-TL-H	ONSEMI	获取价格	Power MOSFET
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VEC2801	SANYO	获取价格	General-Purpose Switching Device Applications
VEC280-1-XXX-0	COOPER	获取价格	Analog Circuit
VEC280-2-XXX-0	COOPER	获取价格	Analog Circuit

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