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VEC2605

更新时间： 2024-11-03 21:55:43
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6页 56K
描述
P-Channel and N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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VEC2605 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.61
最大漏极电流 (Abs) (ID)：3 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs)：0.9 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

VEC2605 数据手册

 浏览型号VEC2605的Datasheet PDF文件第2页浏览型号VEC2605的Datasheet PDF文件第3页浏览型号VEC2605的Datasheet PDF文件第4页浏览型号VEC2605的Datasheet PDF文件第5页浏览型号VEC2605的Datasheet PDF文件第6页 
Ordering number : ENN8197  
P-Channel and N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
VEC2605  
Features  
• Best suited for DC/DC converters.  
• The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance  
and ultrahigh-speed switching, thereby enabling high-density mounting.  
• 2.5V drive.  
• Mounting height 0.75mm.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
P-channel  
-- 20  
N-channel  
20  
Unit  
V
V
DSS  
GSS  
V
±10  
-- 1  
±10  
3
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (900mm2✕0.8mm)1unit  
--4  
12  
0.9  
A
DP  
P
0.8  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
[P-channel]  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0  
--20  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=--20V, V =0  
GS  
--1  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0  
DS  
±10  
V
(off)  
GS  
=--10V, I =--1mA  
--0.4  
0.72  
--1.4  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--500mA  
1.2  
380  
540  
115  
23  
S
D
R
(on)1  
DS  
I
=--500mA, V =--4V  
GS  
500  
760  
mΩ  
mΩ  
pF  
pF  
pF  
D
D
Static Drain-to-Source On-State Resistance  
R
(on)2  
DS  
I
=--300mA, V =--2.5V  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : BV  
Ciss  
V
V
V
=--10V, f=1MHz  
=--10V, f=1MHz  
=--10V, f=1MHz  
DS  
DS  
DS  
Coss  
Crss  
15  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
12505PF TS IM TB-00001142  
No.8197-1/6  
123456

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