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VEC2315_12 PDF预览

VEC2315_12

更新时间: 2024-11-04 11:58:47
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
7页 449K
描述
General-Purpose Switching Device Applications

VEC2315_12 数据手册

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Ordering number : EN8699A  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFETs  
General-Purpose Switching Device  
Applications  
VEC2315  
Features  
ON-resistance  
4V drive  
High-density mounting  
Protection diode in  
R
(on)1=105m (typ.)  
Ω
DS  
Halogen free compliance  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--60  
±20  
--2.5  
--10  
0.9  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Total Dissipation  
I
PW 10 s, duty cycle 1%  
A
μ
DP  
P
P
When mounted on ceramic substrate (900mm2 0.8mm) 1unit  
W
W
°C  
°C  
×
D
T
When mounted on ceramic substrate (900mm2 0.8mm)  
1.0  
×
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
--55 to +150  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: VEC8  
7012-002  
• JEITA, JEDEC  
: -  
• Minimum Packing Quantity : 3,000 pcs./reel  
0.3  
0.15  
VEC2315-TL-H  
8
7
6
5
Packing Type : TL  
Marking  
UM  
LOT No.  
TL  
1
2
3
4
0.65  
2.9  
Electrical Connection  
1 : Source1  
2 : Gate1  
3 : Source2  
4 : Gate2  
5 : Drain2  
6 : Drain2  
7 : Drain1  
8 : Drain1  
8
7
6
5
SANYO : VEC8  
1
2
3
4
http://semicon.sanyo.com/en/network  
80812 TKIM/30712PA TKIM TC-00002731 No.8699-1/7  

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