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VEC2415-TL-E PDF预览

VEC2415-TL-E

更新时间: 2024-11-05 01:16:03
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
5页 553K
描述
Power MOSFET

VEC2415-TL-E 技术参数

是否无铅: 不含铅生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PDSO-F8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.27
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):3 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F8
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1 W表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

VEC2415-TL-E 数据手册

 浏览型号VEC2415-TL-E的Datasheet PDF文件第2页浏览型号VEC2415-TL-E的Datasheet PDF文件第3页浏览型号VEC2415-TL-E的Datasheet PDF文件第4页浏览型号VEC2415-TL-E的Datasheet PDF文件第5页 
VEC2415  
Power MOSFET  
60V, 80m, 3A, Dual N-Channel  
This Power MOSFET is produced using ON Semiconductor’s trench  
technology, which is specifically designed to minimize gate charge and low  
on resistance. This device is suitable for applications with low gate charge  
driving or low on resistance requirements.  
www.onsemi.com  
Features  
Low On-Resistance  
4V drive  
Low-Profile Package  
ESD Diode-Protected Gate  
Pb-Free and RoHS compliance  
Halogen Free compliance : VEC2415-TL-W  
V
R
(on) Max  
I
DSS  
DS  
D Max  
3A  
80m@ 10V  
106m@ 4.5V  
116m@ 4V  
60V  
ELECTRICAL CONNECTION  
N-Channel  
Typical Applications  
Motor Driver  
DC/DC Converter  
8
7
6
5
1 :Source1  
2 :Gate1  
3 :Source2  
4 :Gate2  
5 :Drain2  
6 :Drain2  
7 :Drain1  
8 :Drain1  
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Value  
Unit  
V
V
V
60  
20  
3
DSS  
GSS  
1
2
3
4
V
I
A
D
Drain Current (Pulse)  
PACKING TYPE : TL  
MARKING  
I
12  
A
DP  
PW 10s, duty cycle 1%  
Power Dissipation  
UN  
LOT No.  
When mounted on ceramic substrate  
(900mm2 0.8mm) 1unit  
Total Dissipation  
P
P
0.9  
W
D
T
TL  
When mounted on ceramic substrate  
(900mm2 0.8mm)  
1.0  
W
Junction Temperature  
Tj  
150  
C  
C  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
Storage Temperature  
Tstg  
55 to +150  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction to Ambient  
Symbol  
Value  
Unit  
R
JA  
138.8  
C/W  
When mounted on ceramic substrate  
(900mm2 0.8mm) 1unit  
© Semiconductor Components Industries, LLC, 2015  
October 2015 - Rev. 1  
1
Publication Order Number :  
VEC2415/D  

VEC2415-TL-E 替代型号

型号 品牌 替代类型 描述 数据表
VEC2415-TL-W ONSEMI

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