Datasheet > VEC2315

VEC2315

更新时间： 2024-11-05 02:57:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
5页	541K
描述
Dual P-Channel Power MOSFET

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VEC2315 数据手册

VEC2315

Power MOSFET

–60V, 137mΩ, –2.5A, Dual P-Channel

This Power MOSFET is produced using ON Semiconductor’s trench

technology, which is specifically designed to minimize gate charge and low

on resistance. This device is suitable for applications with low gate charge

driving or low on resistance requirements.

www.onsemi.com

Features

 Low On-Resistance

 4V drive

 Low-Profile Package

 ESD Diode-Protected Gate

 Pb-Free, Halogen Free and RoHS compliance

(on) Max

D Max

DSS

137mΩ@ 10V

180mΩ@ 4.5V

194mΩ@ 4V

60V

2.5A

ELECTRICAL CONNECTION

P-Channel

Typical Applications

 Motor Driver

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

1 :Source1

2 :Gate1

3 :Source2

4 :Gate2

5 :Drain2

6 :Drain2

7 :Drain1

8 :Drain1

Symbol

Value

Unit

60

20

DSS

GSS

2.5

Drain Current (Pulse)

10

PW  10s, duty cycle  1%

Power Dissipation

PACKING TYPE : TL

MARKING

When mounted on ceramic substrate

(900mm² 0.8mm) 1unit

Total Dissipation

0.9

LOT No.

When mounted on ceramic substrate

(900mm² 0.8mm)

1.0

Junction Temperature

150

C

Storage Temperature

Tstg

55 to +150

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

Symbol

Value

Unit

JA

138.8

C/W

When mounted on ceramic substrate

(900mm² 0.8mm) 1unit

October 2015 - Rev. 1

Publication Order Number :

VEC2315/D

12 3 4 5

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