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VEC2601

更新时间： 2024-11-04 20:21:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 68K
描述
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,3A I(D),TSOP

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中文翻译

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VEC2601 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.6Is Samacsys：N
最大漏极电流 (Abs) (ID)：3 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs)：0.9 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

VEC2601 数据手册

 浏览型号VEC2601的Datasheet PDF文件第2页浏览型号VEC2601的Datasheet PDF文件第3页浏览型号VEC2601的Datasheet PDF文件第4页浏览型号VEC2601的Datasheet PDF文件第5页浏览型号VEC2601的Datasheet PDF文件第6页 
Ordering number : ENA0933  
SANYO Sem iconductors  
DATA S HEET  
N-Channel and P-Channel Silicon MOSFETs  
General-Purpose Switching Device  
Applications  
VEC2601  
Features  
• A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving  
P-channel MOSFET enables high-density mounting.  
• Best suited for load switches.  
• 2.5V drive.  
• 0.75mm mount high.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
N-channel  
30  
P-channel  
--20  
Unit  
V
V
DSS  
GSS  
V
±10  
0.15  
0.6  
±10  
--3  
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
--12  
A
DP  
P
Mounted on a ceramic board (900mm2✕0.8mm)1unit  
0.9  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
[N-channel]  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
30  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=30V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
V
(off)  
GS  
=10V, I =100µA  
0.4  
1.3  
D
Forward Transfer Admittance  
Marking : BD  
yfs  
=10V, I =80mA  
0.15  
0.22  
S
D
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
91207PE TI IM TC-00000864  
No. A0933-1/6  
123456

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