是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | POWER HSOP-8 | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 雪崩能效等级(Eas): | 28.9 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 40 A | 最大漏源导通电阻: | 0.0075 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 68 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2708TP-E1-AZ | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET | |
UPA2708TP-E2 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET | |
UPA2708TP-E2-AZ | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET | |
UPA2709GR-E1 | NEC |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2709GR-E1-A | NEC |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2709GR-E2-A | NEC |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2710 | ETC |
获取价格 |
UPA2710GR Data Sheet | Data Sheet[02/2003] | |
UPA2710GR | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOSFET | |
UPA2710GR-A | NEC |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 30V, 0.011ohm, 1-Element, P-Channel, Silicon, Met | |
UPA2711 | ETC |
获取价格 |
UPA2711GR Preliminary Product Information | Preliminary Product Information[01/2002] |