是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.19 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 7 A | 最大漏源导通电阻: | 0.034 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2714GR(0)-E1-A | RENESAS |
获取价格 |
Pch Single Power Mosfet -30V -7A 20Mohm Power Sop8, SOP, /Embossed Tape | |
UPA2714GR(0)-E2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),SO | |
UPA2714GR-A | NEC |
获取价格 |
暂无描述 | |
UPA2714GR-E1-A | RENESAS |
获取价格 |
Pch Single Power Mosfet -30V -7A 20Mohm Power Sop8, SOP, /Embossed Tape | |
UPA2714GR-E2 | RENESAS |
获取价格 |
UPA2714GR-E2 | |
UPA2714GR-E2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),SO | |
UPA2714GR-E2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),SO | |
UPA2715GR-E1-A | NEC |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 30V, 0.009ohm, 1-Element, P-Channel, Silicon, Met | |
UPA2715GR-E2-A | NEC |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 30V, 0.009ohm, 1-Element, P-Channel, Silicon, Met | |
UPA2716AGR-E2-AT | RENESAS |
获取价格 |
14A, 30V, 0.0135ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER, SOP-8 |