UPA2714GR-A

更新时间： 2024-10-14 13:15:11

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	90K
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中文翻译

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数据手册

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UPA2714GR-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA2714GR

SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA2714GR is P-Channel MOS Field Effect Transistor

designed for power management applications of notebook

computers and Li-ion battery protection circuit.

1, 2, 3

; Source

; Gate

5, 6, 7, 8 ; Drain

FEATURES

• Low on-state resistance

R^DS(on)1= 20 mΩ MAX. (V^GS= −10 V, I^D= −3.5 A)

R^DS(on)2= 30 mΩ MAX. (V^GS= −4.5 V, I^D= −3.5 A)

R^DS(on)3= 34 mΩ MAX. (V^GS= −4.0 V, I^D= −3.5 A)

• Low C^iss: C^iss= 1370 pF TYP.

6.0 ±0.3

4.4

5.37 MAX.

0.8

• Small and surface mount package (Power SOP8)

0.5 ±0.2

ORDERING INFORMATION

0.10

1.27 0.78 MAX.

PART NUMBER

PACKAGE

+0.10

0.40

0.12 M

–0.05

µPA2714GR

Power SOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, All terminals are connected.)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

−30

m20

EQUIVALENT CIRCUIT

Drain Current (pulse) ^Note1

m28

Drain

Total Power Dissipation ^Note2

Total Power Dissipation ^Note3

Channel Temperature

°C

P^T2

150

Body

Tch

Diode

Gate

Storage Temperature

Tstg

−55 to +150

−7

Single Avalanche Current ^Note4

Single Avalanche Energy ^Note4

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

I^AS

Source

E^AS

4.9

2. Mounted on a ceramic substrate of 1200 mm²x 2.2 mm

3. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm) , PW = 10 sec

4. Starting T^ch= 25°C, V^DD= −15 V, R^G= 25 Ω, L = 100 µH, V^GS= −20 → 0 V

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,

and quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with NEC Electronics sales

representative for availability and additional information.

Document No.

G15982EJ2V0DS00 (2nd edition)

Date Published November 2002 NS CP(K)

Printed in Japan

The mark ! shows major revised points.

2002

12 3 4 5 6 7 8

中文翻译

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与UPA2714GR-A相关器件

型号	品牌	获取价格	描述	数据表
UPA2714GR-E1-A	RENESAS	获取价格	Pch Single Power Mosfet -30V -7A 20Mohm Power Sop8, SOP, /Embossed Tape
UPA2714GR-E2	RENESAS	获取价格	UPA2714GR-E2
UPA2714GR-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),SO
UPA2714GR-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),SO
UPA2715GR-E1-A	NEC	获取价格	Power Field-Effect Transistor, 18A I(D), 30V, 0.009ohm, 1-Element, P-Channel, Silicon, Met
UPA2715GR-E2-A	NEC	获取价格	Power Field-Effect Transistor, 18A I(D), 30V, 0.009ohm, 1-Element, P-Channel, Silicon, Met
UPA2716AGR-E2-AT	RENESAS	获取价格	14A, 30V, 0.0135ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER, SOP-8
UPA2716GR	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA2717GR	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA2717GR-A	RENESAS	获取价格	15A, 30V, 0.0104ohm, P-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8

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