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UPA2708TP-E1-AZ PDF预览

UPA2708TP-E1-AZ

更新时间: 2024-10-30 12:47:15
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲光电二极管ISM频段
页数 文件大小 规格书
7页 141K
描述
SWITCHING N-CHANNEL POWER MOSFET

UPA2708TP-E1-AZ 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:LEAD FREE, POWER HSOP-8Reach Compliance Code:compliant
风险等级:5.69Is Samacsys:N
雪崩能效等级(Eas):28.9 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):40 A
最大漏源导通电阻:0.0075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3/e6
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):68 A认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN/TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UPA2708TP-E1-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µ PA2708TP  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The µ PA2708TP which has a heat spreader is N-  
channel MOS Field Effect Transistor designed for  
DC/DC converter and power management applications  
of notebook computer.  
PART NUMBER  
µ PA2708TP-E1  
PACKAGE  
Power HSOP8  
Power HSOP8  
Power HSOP8  
Power HSOP8  
Note  
Note  
µ PA2708TP-E1-AZ  
µ PA2708TP-E2  
FEATURES  
µ PA2708TP-E2-AZ  
Low on-state resistance  
Note Pb-free (This product does not contain Pb in  
RDS(on)1 = 5.5 mMAX. (VGS = 10 V, ID = 9.0 A)  
RDS(on)2 = 7.5 mMAX. (VGS = 4.5 V, ID = 9.0 A)  
Low Ciss: Ciss = 4700 pF TYP. (VDS = 10 V, VGS = 0 V)  
Small and surface mount package (Power HSOP8)  
external electrode.)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
30  
V
20  
V
40  
A
Drain Current (pulse) Note1  
68  
34  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation Note2  
Channel Temperature  
W
W
°C  
°C  
A
PT2  
4.3  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
17  
Single Avalanche Current Note3  
Single Avalanche Energy Note3  
Notes 1. PW 10 µs, Duty Cycle 1%  
IAS  
EAS  
28.9  
mJ  
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec  
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 , L = 100 µH, VGS = 20 0 V  
THERMAL RESISTANCE  
Channel to Ambient Note  
Rth(ch-A)  
Rth(ch-C)  
96.2  
3.68  
°C/W  
°C/W  
Channel to Case  
Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G17034EJ1V0DS00 (1st edition)  
Date Published June 2005 NS CP(K)  
Printed in Japan  
2004  

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