Datasheet > UPA2711GR-E1

UPA2711GR-E1

更新时间： 2024-10-31 09:48:35

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	149K
描述
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,13A I(D),SO

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中文翻译

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技术参数
数据手册

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UPA2711GR-E1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	配置：	Single
最大漏极电流 (Abs) (ID)：	13 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

UPA2711GR-E1 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA2711GR

SWITCHING

P-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA2711GR is P-Channel MOS Field Effect Transistor

designed for power management applications of notebook

computers and Li-ion battery protection circuit.

1, 2, 3

: Source

: Gate

5, 6, 7, 8 : Drain

FEATURES

• Low on-state resistance

R^DS(on)1= 9 mΩ MAX. (VGS = −10 V, ID = −6.5 A)

R^DS(on)2= 15 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A)

6.0 ±0.3

4.4

5.37 MAX.

0.8

R^DS(on)3= 20 mΩ MAX. (VGS = −4.0 V, ID = −6.5 A)

• Low C^iss: Ciss = 2450 pF TYP.

• Small and surface mount package (Power SOP8)

0.5 ±0.2

0.10

1.27 0.78 MAX.

ORDERING INFORMATION

+0.10

0.40

0.12 M

–0.05

PART NUMBER

PACKAGE

µ PA2711GR

Power SOP8

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

P^T2

T^ch

Tstg

I^AS

–30

m20

m13

m52

150

EQUIVALENT CIRCUIT

Drain Current (pulse) ^Note1

Drain

Note2

Total Power Dissipation

°C

Note3

Body

Diode

Gate

Channel Temperature

Storage Temperature

–55 to + 150

−13

Single Avalanche Current ^Note4

Single Avalanche Energy ^Note4

Source

E^AS

16.9

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 1200 mm²x 2.2 mm

3. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec

4. Starting T^ch= 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G15979EJ1V0DS00 (1st edition)

Date Published March 2004 NS CP(K)

Printed in Japan

2004

12 3 4 5 6 7

中文翻译

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与UPA2711GR-E1相关器件

型号	品牌	获取价格	描述	数据表
UPA2711GR-E2	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,13A I(D),SO
UPA2712	ETC	获取价格	UPA2712GR Data Sheet \| Data Sheet[11/2002]
UPA2712GR	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA2712GR-A	NEC	获取价格	暂无描述
UPA2713	ETC	获取价格	UPA2713GR Data Sheet \| Data Sheet[01/2002]
UPA2713GR	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA2713GR	RENESAS	获取价格	8000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, SOP-8
UPA2713GR-A	RENESAS	获取价格	8000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, SOP-8
UPA2713GR-E1-A	RENESAS	获取价格	Pch Single Power Mosfet -30V -8A 16Mohm Power Sop8, SOP, /Embossed Tape
UPA2713GR-E2	RENESAS	获取价格	UPA2713GR-E2

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