Datasheet > UPA2713

UPA2713

更新时间： 2024-10-29 23:39:35

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描述
UPA2713GR Data Sheet \| Data Sheet[01/2002]

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中文翻译

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UPA2713 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA2713GR

SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA2713GR is P-channel MOS Field Effect Transistor

designed for power management applications of notebook

computers and Li-ion battery protection circuit.

1, 2, 3 : Source

: Gate

5, 6, 7, 8: Drain

FEATURES

• Low on-state resistance

R^DS(on)1= 16 mΩ MAX. (V^GS= −10 V, I^D= −4.0 A)

R^DS(on)2= 25 mΩ MAX. (V^GS= −4.5 V, I^D= −4.0 A)

R^DS(on)3= 30 mΩ MAX. (V^GS= −4.0 V, I^D= −4.0 A)

• Low C^iss: C^iss= 1600 pF TYP.

6.0 ±0.3

4.4

5.37 MAX.

0.8

• Small and surface mount package (Power SOP8)

0.5 ±0.2

0.10

1.27 0.78 MAX.

ORDERING INFORMATION

+0.10

0.40

0.12 M

–0.05

PART NUMBER

PACKAGE

µPA2713GR

Power SOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, All terminals are connected.)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Total Power Dissipation ^Note3

Channel Temperature

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

−30

m20

m32

EQUIVALENT CIRCUIT

°C

P^T2

Drain

Tch

150

Storage Temperature

Tstg

−55 to +150

Body

Single Avalanche Current ^Note4

Single Avalanche Energy ^Note4

I^AS

Diode

Gate

E^AS

6.4

Source

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 1200 mm²x 2.2 mm

3. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec

4. Starting T^ch= 25°C, V^DD= −15 V, R^G= 25 Ω, L = 100 µH, V^GS= −20 → 0 V

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G15981EJ1V0DS00 (1st edition)

Date Published January 2003 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7

中文翻译

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与UPA2713相关器件

型号	品牌	获取价格	描述	数据表
UPA2713GR	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA2713GR	RENESAS	获取价格	8000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, SOP-8
UPA2713GR-A	RENESAS	获取价格	8000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, SOP-8
UPA2713GR-E1-A	RENESAS	获取价格	Pch Single Power Mosfet -30V -8A 16Mohm Power Sop8, SOP, /Embossed Tape
UPA2713GR-E2	RENESAS	获取价格	UPA2713GR-E2
UPA2713GR-E2-AT	RENESAS	获取价格	Pch Single Power Mosfet -30V -8A 16Mohm Power Sop8, SOP, /Embossed Tape
UPA2714	ETC	获取价格	UPA2714GR Data Sheet \| Data Sheet[11/2002]
UPA2714GR	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA2714GR(0)-E1-A	RENESAS	获取价格	Pch Single Power Mosfet -30V -7A 20Mohm Power Sop8, SOP, /Embossed Tape
UPA2714GR(0)-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),SO

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