Datasheet > UPA1703G

UPA1703G

更新时间： 2024-09-15 04:26:55

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
7页	63K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

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UPA1703G 数据手册

DATA SHEET

MOS FIELD EFFECT POWER TRANSISTORS

µPA1703

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

(in millimeter)

This product is N-Channel MOS Field Effect Transis-

tor designed for power management applications of

notebook computers.

FEATURES

1, 2, 3

5, 6, 7, 8 ; Drain

; Source

; Gate

•

Super Low On-Resistance

R^DS(on)1= 10.5 mΩ MAX. (V^GS= 10 V, I^D= 5.0 A)

R^DS(on)2= 17 mΩ

MAX. (V^GS= 4 V, I^D= 5.0 A)

6.0 ±0.3

4.4

•

Low C^issC^iss= 2180 pF TYP.

Built-in G-S Protection Diode

Small and Surface Mount Package

(Power SOP8)

5.37 MAX.

0.8

0.5 ±0.2

0.10

1.27 0.78 MAX.

+0.10

–0.05

0.40

0.12 M

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C, all terminals are connected)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)^Notes1

Total Power Dissipation (T^A= 25 °C)^Notes2

Channel Temperature

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±20

Drain

±10

±40

Body

Diode

2.0

°C

Gate

T^ch

150

Gate

Protection

Diode

Storage Temperature

T^stg

−55 to

+150

Source

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 1200 mm²× 0.7 mm

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated

voltage may be applied to this device.

Document No. D11494EJ1V0DS00 (1st edition)

Date Published December 1996 N

Printed in Japan

1996

12 3 4 5 6 7

中文翻译

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