UPA1709

更新时间： 2024-10-31 22:41:43

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
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描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

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数据手册

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UPA1709 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1709

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management

switch.

FEATURES

• Low on-resistance

DS(on)1

PACKAGE DRAWING (Unit : mm)

= 9.3 mΩ (TYP.) (V = 10 V, I = 4.5 A)

DS(on)2

= 13.8 mΩ (TYP.) (V = 4.5 V, I = 4.5 A)

; Source

; Gate

1,2,3

iss

• Low C : C = 1850 pF (TYP.)

; Drain

5,6,7,8

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)

6.0 ±0.3

4.4

5.37 Max.

0.8

ORDERING INFORMATION

PART NUMBER

PACKAGE

0.5 ±0.2

0.10

µ PA1709G

Power SOP8

1.27

0.78 Max.

+0.10

–0.05

0.40

0.12 M

EQUIVARENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, All terminals are connected.)

DSS

Drain to Source Voltage (V = 0 V)

±25

Drain

GSS

Gate to Source Voltage (V = 0 V)

D(DC)

Drain Current (DC)

±9.0

Drain Current (pulse) ^Note1

D(pulse)

Body

Diode

±36

Gate

Note2

Total Power Dissipation (T = 25°C)

2.0

°C

Channel Temperature

Storage Temperature

150

Gate

Protection

Diode

stg

–55 to + 150

Source

Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 1200 mm²x 0.7 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

Document No.

G13436EJ1V0DS00 (1st edition)

Date Published November 1998 NS CP(K)

Printed in Japan

1998

12 3 4 5 6 7 8

中文翻译

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