5秒后页面跳转
UPA1704 PDF预览

UPA1704

更新时间: 2024-09-14 22:41:43
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 65K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

UPA1704 数据手册

 浏览型号UPA1704的Datasheet PDF文件第2页浏览型号UPA1704的Datasheet PDF文件第3页浏览型号UPA1704的Datasheet PDF文件第4页浏览型号UPA1704的Datasheet PDF文件第5页浏览型号UPA1704的Datasheet PDF文件第6页浏览型号UPA1704的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
PA1704  
µ
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
This µPA1704 is N-Channel MOS Field Effect Transistor  
designed for power management applications and Li-ion  
battery application.  
8
5
; Source  
; Gate  
1,2,3  
4
; Drain  
5,6,7,8  
FEATURES  
2.5-V gate drive and low on-resistance  
6.0 ±0.3  
1
4
DS(on)1  
GS  
D
R
R
= 13 mMAX. (V = 4.0 V, I = 5.0 A)  
4.4  
5.37 MAX.  
0.8  
DS(on)2  
GS  
D
= 16 mMAX. (V = 2.5 V, I = 5.0 A)  
iss  
iss  
Low C : C = 2700 pF TYP.  
Built-in G-S protection diode  
0.5 ±0.2  
0.10  
1.27 0.78 MAX.  
Small and surface mount package (Power SOP8)  
+0.10  
–0.05  
0.40  
0.12 M  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
µPA1704G  
Power SOP8  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
V
30  
V
V
EQUIVALENT CIRCUIT  
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
±12  
±10  
±40  
2.0  
D(DC)  
Drain Current (DC)  
Drain Current (pulse) Note1  
I
A
Drain  
D(pulse)  
I
A
Note2  
Body  
A
Total Power Dissipation (T = 25°C)  
T
P
W
°C  
Diode  
Gate  
ch  
T
Channel Temperature  
Storage Temperature  
150  
stg  
T
–55 to + 150 °C  
Gate  
Protection  
Diode  
Source  
Notes 1. PW 10 µs, Duty Cycle 1 %  
2. Mounted on ceramic substrate of 1200 mm2 x 0.7 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
D12908EJ1V1DS00 (1st edition)  
Date Published January 2000 NS CP(K)  
Printed in Japan  
1998, 1999  
©

与UPA1704相关器件

型号 品牌 获取价格 描述 数据表
UPA1704G NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1705 NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1705G NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1706 NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1706G NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1706G-A NEC

获取价格

Power Field-Effect Transistor, 13A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
UPA1706TP NEC

获取价格

SWITCHING N-CHANNEL POWER MOSFET
UPA1706TP-AZ NEC

获取价格

Power Field-Effect Transistor, 28A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
UPA1707 NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
UPA1707G NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE