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UPA1706TP-AZ PDF预览

UPA1706TP-AZ

更新时间: 2024-09-15 12:59:35
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 62K
描述
Power Field-Effect Transistor, 28A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, HSOP-8

UPA1706TP-AZ 技术参数

生命周期:Transferred零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.18雪崩能效等级(Eas):36.1 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):28 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e6元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UPA1706TP-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
PA1706  
µ
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
This product is N-Channel MOS Field Effect Transistor  
designed for DC/DC converters and power management  
applications of notebook computers.  
8
5
; Source  
; Gate  
1,2,3  
4
; Drain  
5,6,7,8  
FEATURES  
Super Low on-resistance  
6.0 ±0.3  
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 5.8 m(TYP.) (V = 10 V, I = 7.0 A)  
1
4
4.4  
5.37 MAX.  
0.8  
GS  
D
= 7.0 m(TYP.) (V = 4.5 V, I = 7.0 A)  
GS  
D
= 8.0 m(TYP.) (V = 4.0 V, I = 7.0 A)  
iss  
iss  
Low C : C = 3000 pF (TYP.)  
0.5 ±0.2  
Built-in G-S protection diode  
0.10  
1.27 0.78 MAX.  
Small and surface mount package (Power SOP8)  
+0.10  
–0.05  
0.40  
0.12 M  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
µPA1706G  
Power SOP8  
EQUIVALENT CIRCUIT  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected)  
Drain  
Drain to Source Voltage Note1  
Gate to Source Voltage Note2  
Drain Current (DC)  
DSS  
V
V
30  
±20  
V
V
GSS  
Body  
Diode  
Gate  
D(DC)  
I
±13  
A
Drain Current (pulse) Note3  
D(pulse)  
I
±52  
A
Gate  
Note4  
Protection  
Diode  
Source  
A
Total Power Dissipation (T = 25°C)  
T
P
2.0  
W
°C  
°C  
ch  
Channel Temperature  
Storage Temperature  
T
150  
stg  
T
–55 to + 150  
Notes 1. VGS = 0 V  
2. VDS = 0 V  
3. PW 10 µs, Duty Cycle 1 %  
4. Mounted on ceramic substrate of 1200 mm2 x 0.7mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice.  
Document No.  
G13083EJ1V0DS00 (1st edition)  
Date Published January 1999 NS CP(K)  
Printed in Japan  
1998  
©

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