Datasheet > UPA1700G

UPA1700G

更新时间： 2024-09-12 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	86K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 7A I(D) \| SO

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UPA1700G 数据手册

DATA SHEET

MOS FIELD EFFECT POWER TRANSISTOR

µPA1700

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

This product is N-Channel MOS Field Effect Tran-

sistor designed for DC/DC converter and power man-

agement applications of note book computers.

(in millimeter)

1,2,3 ; Source

; Gate

5,6,7,8 ; Drain

FEATURES

•

Low On-Resistance

R^DS(on)1= 27 mΩ Typ. (VGS = 10 V, ID = 3.5 A)

RDS(on)2 = 50 mΩ Typ. (VGS = 4 V, ID = 3.5 A)

6.0±0.3

4.4

•

Low C^iss

Ciss = 850 pF Typ.

5.37 Max

0.8

Built-in G-S Protection Diode

Small and Surface Mount Package

(Power SOP8)

0.5±0.2

0.78 Max

0.10

1.27

+0.10

–0.05

0.40

0.12 M

ORDERING INFORMATION

PART NUMBER

PACKAGE

EQUIVALENT CIRCUIT

µPA1700G

Power SOP8

Drain

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Body

Diode

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

VDSS

V^GDS

I^D(DC)

ID(pulse)

P^T

±20

±7.0

±28

2.0

Gate

Gate Protection

Diode

Drain Current (pulse)*

Total Power Dissipation

(TA = 25 °C)**

Source

To keep good radiate condition,

It is recommended that all pins

are soldering to print board.

Channel Temperature

Storage Temperature

TCH

150

°C

T^stg

–55 to +150

PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Mounted on ceramic substate of 1200 mm²× 0.7 mm

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

Document No. G10479EJ2V0DS00 (2nd edition)

Date Published September 1995 P

Printed in Japan

1995

12 3 4 5 6 7 8

中文翻译

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