TTC0002(Q)

更新时间： 2024-10-30 13:15:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
5页	188K
描述
Trans GP BJT NPN 160V 18A 3-Pin(3+Tab) TO-3PL

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中文翻译

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技术参数
数据手册

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TTC0002(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	16 weeks
风险等级：	2.09	Base Number Matches：	1

TTC0002(Q) 数据手册

TTC0002

TOSHIBA Transistor Silicon NPN Triple Diffused Type

TTC0002

○Power Amplifier Applications

Unit: mm

•

High collector voltage: V

= 160 V (min)

CEO

Complementary to TTA0002

Recommended for 100-W high-fidelity audio frequency amplifier output

stage.

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

160

Collector-emitter voltage

Emitter-base voltage

160

Collector current

Pulse

JEDEC

JEITA

―

Base current

Collector power dissipation

Junction temperature

Storage temperature range

180

°C

東芝

2-21F1A

150

stg

−55 to 150

Weight: 9.75 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-06-11

12 3 4 5

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