Datasheet > TTC015B

TTC015B

更新时间： 2024-11-19 14:56:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	223K
描述
NPN Bipolar Transistor, 80 V, 2 A, TO-126N

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TTC015B 数据手册

TTC015B

Bipolar Transistors Silicon NPN Epitaxial Type

TTC015B

1. Applications

•

Power Amplifiers

•

Power Switching

2. Features

(1) High DC current gain

: hFE = 100 to 200 (IC = 0.5 A)

(2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A)

(3) High-speed switching

: tstg = 400 ns (typ.) (IC = 1A)

(4) Complementary to TTA008B

3. Packaging and Internal Circuit (Note)

1. Emitter

2. Collector

3. Base

TO-126N

Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation

voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical

isolation from surrounding parts.

Start of commercial production

2013-08

2015-01-22

Rev.1.0

12 3 4 5 6 7

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